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NPN Silicon Switching Transistor
High current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage
q
SXT 2222 A
Type SXT 2222 A
Marking 2P
Ordering Code (tape and reel) Q68000-A8330
Pin Configuration 1 2 3 B C E
Package1) SOT-89
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 120 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values 40 75 6 600 1 150 - 65 ... + 150
Unit V
mA W C
90 30
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SXT 2222 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125 C Collector cutoff current VCE = 30 V, VBE = 0.5 V Emitter-base cutoff current VEB = 3 V, IC = 0 Base cutoff current VCE = 30 V, VBE = - 3 V DC current gain IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = - 55 C IC = 150 mA, VCE = 10 V IC = 150 mA, VCE = 1 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - ICEX IEB0 IBL hFE 35 50 75 35 100 50 40 VCEsat - - VBEsat 0.6 - - - 1.2 2.0 - - 0.3 1.0 - - - - - - - - - - - 300 - - V - - - - - - - - 10 10 10 10 20 - nA
A
Values typ. max.
Unit
40 75 6
- - -
- - -
V
nA
1)
Pulse test conditions: t 300 s, D 2 %.
Semiconductor Group
2
SXT 2222 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 2 V, f = 1 MHz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Voltage feedback ratio IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Small-signal current gain IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz IC = 10 mA, VCE = 10 V, f = 1 kHz Collector-base time constant IE = 20 mA, VCB = 20 V, f = 31.8 MHz Noise figure IC = 100 A, VCE = 10 V, RS = 1 k, f = 1 kHz Switching times VCC = 30 V, VBE = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA fT Cobo Cibo hie 2 0.25 hre - - hfe 50 75 hoe 5 25 rb'Cc NF - - - - - - 35 200 150 4 ps dB - - 300 375
S
Values typ. max.
Unit
300 - -
- - -
- 8 25
MHz pF
k - - - - 8 1.25 10- 4 8 4 -
td tr ts tf
- - - -
- - - -
10 25 225 60
ns ns ns ns
Semiconductor Group
3
SXT 2222 A
Test circuits Delay and rise time
Storage and fall time
Semiconductor Group
4
SXT 2222 A
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Collector-base capacitance Ccb = f (VCB) f = 1 MHz
Permissible pulse load Ptot max / Ptot DC = f (tp)
Transition frequency fT = f (IC) VCE = 20 V
Semiconductor Group
5
SXT 2222 A
Saturation voltage IC = f (VBE sat, VCE sat) hFE = 10
DC current gain hFE = f (IC) VCE = 10 V
Delay time td = f (IC) Rise time tr = f (IC)
Storage time ts = f (IC) Fall time tf = f (IC)
Semiconductor Group
6

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